![VTS-N-P-M10B10F160](/uploads/allimg/20240115/9a0070382a292b3f828892d3fbca7715.png)
VTS-N-P-M10B10F160
Dimension:
182mmX182mm±0.5mm
Front side:
1.2mm wide bus bars, Passivated Emitter(AlOx & Silicon nitrideanti-reflection coating)
Back side:
1.2mm wide bus bars, Tunnel Oxide, Silicon nitride anti-reflection coating
Product Details
Product Features
Strict incoming and outgoing inspection
Higher efficiency and bifaciality
Lower temperature coefficient and degradation
Lower hot spot effect and power loss during encapsulation
LETID/LID free impurities, and better anti-PID performance
Quality control
Strict incoming and outgoing inspection
Fully intelligent quality control, real-time monitoring of all equipment and processes
100% of the cells have passed the automated appearance inspection and electrical test
Temperature Coefficients
TkVoltage: -0.30%/K
TkPower:-0.32%/K
TkCurrent:-0.04%/K
Rsh>50Ω,lrev2≤1.0A
![VTS-N-P-M10B10F160](/uploads/allimg/20240115/9f9301c3f27a03b1e84ff45f93f3a17b.png)
Product leadership
More professional, efficient and cleaner products contribute to the
sustainable development of mankind
sustainable development of mankind
![](/uploads/allimg/20240115/f3e9d4b578d5b20086b701f610ea44b3.png)
No Light-Induced
Degradation
High Conversion
Efficiency
Low Encapsulation Loss
Low Temperature Coefficient
Strong Low-Light Performance
Anti-PID
(Potential-Induced Degradation)